FDD6682 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD6682
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 577 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO-252
FDD6682 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD6682 Datasheet (PDF)
fdd6682 dss20201l.pdf
June 2004FDD6682/FDU668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charg
fdd6682.pdf
June 2004FDD6682/FDU668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 75 A, 30 V RDS(ON) = 6.2 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charg
fdd6682.pdf
isc N-Channel MOSFET Transistor FDD6682FEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdd6685.pdf
May 2011 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a wide
fdd6680.pdf
July 1999FDD6680N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(on) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventionalswitching PWM controllers. Optimi
fdd6680as.pdf
April 2008FDD6680AS tm30V N-Channel PowerTrench SyncFETGeneral Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fdd6680s.pdf
December 2000FDD6680S30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDD6680S is designed to replace a single 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 VMOSFET and Schottky diode in synchronous DC:DCRDS(ON) = 17 m @ VGS = 4.5 Vpower supplies. This 30V MOSFET is designed tomaximize power conversion efficiency, providing a low Inclu
fdd6688s.pdf
November 2007tmFDD6688S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6688S is designed to replace a single TO-252 88 A, 30 V. RDS(ON) = 5.1 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 6.3 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fdd6688 fdd6688 fdu6688.pdf
June 2004FDD6688/FDU668830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge
fdd6680a.pdf
February 2000FDD6680AN-Channel, Logic Level, PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V.that has been especially tailored to minimize the on-stateresistance and y
fdd6685.pdf
February 2004 FDD6685 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 40 A, 30 V. RDS(ON) = 20 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench Fast switching speed process. It has been optimized for power management applications requiring a
fdd6685.pdf
FDD6685www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETABS
fdd6680.pdf
FDD6680www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
fdd6680.pdf
isc N-Channel MOSFET Transistor FDD6680FEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
fdd6680as.pdf
isc N-Channel MOSFET Transistor FDD6680ASFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
fdd6680s.pdf
isc N-Channel MOSFET Transistor FDD6680SFEATURESDrain Current : I =55A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdd6688.pdf
isc N-Channel MOSFET Transistor FDD6688FEATURESDrain Current : I =84A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
fdd6688s.pdf
isc N-Channel MOSFET Transistor FDD6688SFEATURESDrain Current : I =88A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.1m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdd6680a.pdf
isc N-Channel MOSFET Transistor FDD6680AFEATURESDrain Current : I =56A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
