FDD6780 PDF and Equivalents Search

 

FDD6780 Specs and Replacement

Type Designator: FDD6780

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 225 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252

FDD6780 substitution

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FDD6780 datasheet

 ..1. Size:297K  fairchild semi
fdd6780.pdf pdf_icon

FDD6780

June 2009 FDD6780 N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

 0.1. Size:331K  fairchild semi
fdd6780a fdu6780a f071.pdf pdf_icon

FDD6780

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro... See More ⇒

 0.2. Size:288K  inchange semiconductor
fdd6780a.pdf pdf_icon

FDD6780

isc N-Channel MOSFET Transistor FDD6780A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =8.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.1. Size:324K  fairchild semi
fdd6782a.pdf pdf_icon

FDD6780

January 2009 FDD6782A N-Channel PowerTrench MOSFET 25 V, 10.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

Detailed specifications: FDD6670AL , FDD6670AS , FDD6672A , FDD6676AS , FDD6682 , FDD6688S , FDD6696 , FDD6776A , 2N7000 , FDD6782A , FDD6796 , FDD6N20TF , FDD6N50TF , FDD6N50TM , FDD7030BL , FDD7N25LZTM , FDD7N60NZTM .

History: IRFR9024PBF

Keywords - FDD6780 MOSFET specs

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