FDD6780
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD6780
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085
Ohm
Package:
TO-252
FDD6780
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD6780
Datasheet (PDF)
..1. Size:297K fairchild semi
fdd6780.pdf 
June 2009FDD6780N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 Asynchronous or conventional switching PWM controllers. It has
0.1. Size:331K fairchild semi
fdd6780a fdu6780a f071.pdf
January 2009FDD6780A / FDU6780A_F071N-Channel PowerTrench MOSFET 25 V, 8.6 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 Asynchronous or conventional switching PWM contro
0.2. Size:288K inchange semiconductor
fdd6780a.pdf
isc N-Channel MOSFET Transistor FDD6780AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =8.6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:324K fairchild semi
fdd6782a.pdf
January 2009FDD6782AN-Channel PowerTrench MOSFET 25 V, 10.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 Asynchronous or conventional switching PWM controllers. It has
8.2. Size:288K inchange semiconductor
fdd6782a.pdf
isc N-Channel MOSFET Transistor FDD6782AFEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =10.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: WPB4002
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