FDFM2P110
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDFM2P110
Marking Code: 2P110
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package: MLP3X3
FDFM2P110
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDFM2P110
Datasheet (PDF)
..1. Size:280K fairchild semi
fdfm2p110.pdf
August 2005FDFM2P110Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2P110 combines the exceptional performance of Buck BoostFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single package -3.5 A
..2. Size:345K onsemi
fdfm2p110.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:286K fairchild semi
fdfm2n111.pdf
August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
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