All MOSFET. FDFMA2P029Z Datasheet

 

FDFMA2P029Z Datasheet and Replacement


   Type Designator: FDFMA2P029Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: MICROFET2X2
 

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FDFMA2P029Z Datasheet (PDF)

 ..1. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA2P029Z

July 2014FDFMA2P029ZIntegrated P-Channel PowerTrench MOSFET and Schottky Diode20V, 3.1A, 95m Features General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1Aportable applications. It features a MOSFET with very low on-

 7.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P029Z

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

 7.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P029Z

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

 7.3. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P029Z

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

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Datasheet: FDD86369F085 , FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , IRFB3607 , FDFMA2P853 , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z .

History: BUZ73AL | MP4N150 | SSM3K329R

Keywords - FDFMA2P029Z MOSFET datasheet

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