FDFMA2P029Z Specs and Replacement

Type Designator: FDFMA2P029Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: MICROFET2X2

FDFMA2P029Z substitution

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FDFMA2P029Z datasheet

 ..1. Size:379K  fairchild semi
 fdfma2p029z.pdf pdf_icon

FDFMA2P029Z

July 2014 FDFMA2P029Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.1A, 95m Features General Description MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1A portable applications. It features a MOSFET with very low on- ... See More ⇒

 7.1. Size:602K  fairchild semi
 fdfma2p857.pdf pdf_icon

FDFMA2P029Z

July 2014 FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0A portable applications. It features a MOSFET with low on-s... See More ⇒

 7.2. Size:346K  fairchild semi
 fdfma2p853t.pdf pdf_icon

FDFMA2P029Z

December 2008 FDFMA2P853T tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOS... See More ⇒

 7.3. Size:289K  fairchild semi
 fdfma2p859t.pdf pdf_icon

FDFMA2P029Z

July 2009 FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General Description This device is designed specifically as a single package solution MOSFET for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 A ultra-portable applications. It features a MOSFET with low... See More ⇒

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Detailed specifications: FDD86369F085, FDD8750, FDD9411F085, FDFC2P100, FDFC3N108, FDFM2N111, FDFM2P110, FDFMA2N028Z, K4145, FDFMA2P853, FDFMA2P853T, FDFMA2P857, FDFMA2P859T, FDFMA3N109, FDFME2P823ZT, FDFME3N311ZT, FDFMJ2P023Z

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