FDFMA2P853 Datasheet and Replacement. Cross Reference Search

FDFMA2P853 Datasheet (PDF)

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September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

0.1. Size:346K fairchild semi
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December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

5.1. Size:602K fairchild semi
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July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

5.2. Size:289K fairchild semi
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July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

Datasheet: FDD8750 , FDD9411F085 , FDFC2P100 , FDFC3N108 , FDFM2N111 , FDFM2P110 , FDFMA2N028Z , FDFMA2P029Z , TK10A60D , FDFMA2P853T , FDFMA2P857 , FDFMA2P859T , FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 .