FDFS2P102A Specs and Replacement

Type Designator: FDFS2P102A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SO-8

FDFS2P102A substitution

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FDFS2P102A datasheet

 ..1. Size:141K  fairchild semi
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FDFS2P102A

August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie... See More ⇒

 5.1. Size:85K  fairchild semi
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FDFS2P102A

October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description Features The FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 V Fairchild's high cell density MOSFET with a very low forward RDS(ON) = 0.200 @ VGS = 4.5 V. voltage drop Schottky barrier rectifier in an SO-8 package. VF ... See More ⇒

 6.1. Size:292K  fairchild semi
 fdfs2p103.pdf pdf_icon

FDFS2P102A

September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie... See More ⇒

 6.2. Size:88K  fairchild semi
 fdfs2p106a.pdf pdf_icon

FDFS2P102A

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif... See More ⇒

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Detailed specifications: FDFMA2P853T, FDFMA2P857, FDFMA2P859T, FDFMA3N109, FDFME2P823ZT, FDFME3N311ZT, FDFMJ2P023Z, FDFS2P102, NCEP15T14, FDFS2P103, FDFS2P103A, FDFS2P106A, FDFS2P753AZ, FDFS2P753Z, FDFS6N303, FDFS6N548, FDFS6N754

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