All MOSFET. FDFS2P106A Datasheet

 

FDFS2P106A Datasheet and Replacement


   Type Designator: FDFS2P106A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SO-8
 

 FDFS2P106A substitution

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FDFS2P106A Datasheet (PDF)

 ..1. Size:88K  fairchild semi
 fdfs2p106a.pdf pdf_icon

FDFS2P106A

June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif

 6.1. Size:85K  fairchild semi
 fdfs2p102.pdf pdf_icon

FDFS2P106A

October 2000FDFS2P102Integrated P-Channel MOSFET and Schottky DiodeGeneral Description FeaturesThe FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 VFairchild's high cell density MOSFET with a very low forwardRDS(ON) = 0.200 @ VGS = 4.5 V.voltage drop Schottky barrier rectifier in an SO-8 package. VF

 6.2. Size:292K  fairchild semi
 fdfs2p103.pdf pdf_icon

FDFS2P106A

September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

 6.3. Size:141K  fairchild semi
 fdfs2p102a.pdf pdf_icon

FDFS2P106A

August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie

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Datasheet: FDFMA3N109 , FDFME2P823ZT , FDFME3N311ZT , FDFMJ2P023Z , FDFS2P102 , FDFS2P102A , FDFS2P103 , FDFS2P103A , IRFP450 , FDFS2P753AZ , FDFS2P753Z , FDFS6N303 , FDFS6N548 , FDFS6N754 , FDG313ND87Z , FDG329N , FDG361N .

History: MPSD65M990

Keywords - FDFS2P106A MOSFET datasheet

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