FDFS2P753AZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDFS2P753AZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.9 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SO-8
FDFS2P753AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDFS2P753AZ Datasheet (PDF)
fdfs2p753az.pdf
April 2008FDFS2P753AZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchilds PowerTrench Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5AMOSFET with a Schottky diode
fdfs2p753z.pdf
November 2006FDFS2P753ZtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode-30V, -3A, 115mFeatures General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0AThe FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5Aforward voltage drop Schottky barrie
fdfs2p102.pdf
October 2000FDFS2P102Integrated P-Channel MOSFET and Schottky DiodeGeneral Description FeaturesThe FDFS2P102 combines the exceptional performance of 3.3 A, 20 V. RDS(ON) = 0.125 @ VGS = 10 VFairchild's high cell density MOSFET with a very low forwardRDS(ON) = 0.200 @ VGS = 4.5 V.voltage drop Schottky barrier rectifier in an SO-8 package. VF
fdfs2p103.pdf
September 2001 FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie
fdfs2p106a.pdf
June 2001 FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional 3.0 A, 60V RDS(ON) = 110 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 140 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectif
fdfs2p102a.pdf
August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional 3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 200 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifie
fdfs2p103a.pdf
August 2002 FDFS2P103A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103A combines the exceptional 5.3 A, 30V RDS(ON) = 59 m @ VGS = 10 V performance of Fairchild's PowerTrench MOSFET RDS(ON) = 92 m @ VGS = 4.5 V technology with a very low forward voltage drop Schottky barrier rectifier
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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