IRFPC60 Specs and Replacement
Type Designator: IRFPC60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO247AC
IRFPC60 substitution
- MOSFET ⓘ Cross-Reference Search
IRFPC60 datasheet
irfpc60pbf sihfpc60.pdf
IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl... See More ⇒
irfpc60 sihfpc60.pdf
IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl... See More ⇒
irfpc60lc-p.pdf
PD - 99438 IRFPC60LC-P HEXFET Power MOSFET D Ultra Low Gate Charge VDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs Rating RDS(on) = 0.40 Reduced Ciss, Coss, Crss G Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16A S Repetitive Avalanche Rated Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly ... See More ⇒
Detailed specifications: IRFP9242, IRFP9243, IRFPC30, IRFPC40, IRFPC48, IRFPC50, IRFPC50A, IRFPC50LC, IRLB3034, IRFPC60LC, IRFPE30, IRFPE40, IRFPE50, IRFPF30, IRFPF40, IRFPF50, IRFPG30
Keywords - IRFPC60 MOSFET specs
IRFPC60 cross reference
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