All MOSFET. FDFS6N754 Datasheet

 

FDFS6N754 Datasheet and Replacement


   Type Designator: FDFS6N754
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SO-8
 

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FDFS6N754 Datasheet (PDF)

 ..1. Size:500K  fairchild semi
fdfs6n754.pdf pdf_icon

FDFS6N754

Final DatasheetAugust 2014FDFS6N754Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 4A, 56mFeatures General Description Max rDS(on) = 56m at VGS = 0V, ID = 4AThe FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max rDS(on) = 75m at VGS = 4.5V, ID = 3.5Alow forward voltage drop Schottky barrier re

 8.1. Size:64K  fairchild semi
fdfs6n303.pdf pdf_icon

FDFS6N754

October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode General Description FeaturesThe FDFS6N303 incorporates a high cell density MOSFET 6 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V.and low forward drop (0.35V) Schottky diode into a single R = 0.055 @ VGS = 4.5 V.DS(ON)surface mount power package. The MOSFET and SchottkyVF

 8.2. Size:617K  fairchild semi
fdfs6n548.pdf pdf_icon

FDFS6N754

August 2014FDFS6N548Integrated N-Channel PowerTrench MOSFET and Schottky Diode30V, 7A, 23mFeatures General Description Max rDS(on) = 23m at VGS = 10V, ID = 7AThe FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 30m at VGS = 4.5V, ID = 6Aforward voltage drop Schottky barrier rectifier in an SO-

 8.3. Size:324K  onsemi
fdfs6n548.pdf pdf_icon

FDFS6N754

FDFS6N548Integrated N-ChannelPOWERTRENCH MOSFETand Schottky DiodeDescriptionThe FDFS6N548 combines the exceptional performance ofwww.onsemi.comON Semiconductors PowerTrench MOSFET technology with a verylow forward voltage drop Schottky barrier rectifier in an SO-8 package.This device is designed specifically as a single package solution forDDDC to DC converters. It

Datasheet: FDFS2P102A , FDFS2P103 , FDFS2P103A , FDFS2P106A , FDFS2P753AZ , FDFS2P753Z , FDFS6N303 , FDFS6N548 , STF13NM60N , FDG313ND87Z , FDG329N , FDG361N , FDH15N50 , FDH27N50 , FDH50N50F133 , FDH5500 , FDI025N06 .

History: HM24N50A | HM15P10D | CM8N50F | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

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