All MOSFET. FDMC86262P Datasheet

 

FDMC86262P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMC86262P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.2 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 0.307 Ohm

Package: Power33

FDMC86262P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC86262P Datasheet (PDF)

1.1. fdmc86262p.pdf Size:328K _upd-mosfet

FDMC86262P
FDMC86262P

April 2015 FDMC86262P P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Semiconductor’s advanced PowerTrench® technology. This Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

2.1. fdmc86260et150.pdf Size:269K _upd-mosfet

FDMC86262P
FDMC86262P

January 2015 FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 mΩ at

2.2. fdmc86265p.pdf Size:288K _fairchild_semi

FDMC86262P
FDMC86262P

May 2014 FDMC86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

 2.3. fdmc86260.pdf Size:246K _fairchild_semi

FDMC86262P
FDMC86262P

December 2012 FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ Features General Description Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

2.4. fdmc86261p.pdf Size:379K _fairchild_semi

FDMC86262P
FDMC86262P

June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

Datasheet: FDMA6676PZ , FDMA86108LZ , FDMA86251 , FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , 2SK117 , FDMC86340ET80 , FDMC86570LET60 , FDMC8676 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , FDME0106NZT .

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