All MOSFET. FDMC8676 Datasheet

 

FDMC8676 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMC8676

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 760 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm

Package: Power33

FDMC8676 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC8676 Datasheet (PDF)

1.1. fdmc8676.pdf Size:263K _upd-mosfet

FDMC8676
FDMC8676

December 2007 FDMC8676 tm N-Channel PowerTrench® MOSFET 30V, 18A, 5.9mΩ Features General Description Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge Low Prof

3.1. fdmc8678s.pdf Size:282K _upd-mosfet

FDMC8676
FDMC8676

July 2009 FDMC8678S tm N-Channel Power Trench® SyncFETTM 30V, 18A, 5.2mΩ Features General Description Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A and package technologies have been combined to offer the Advanced Pack

 4.1. fdmc86570let60.pdf Size:283K _upd-mosfet

FDMC8676
FDMC8676

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 mΩ at VGS = 10

4.2. fdmc86262p.pdf Size:328K _upd-mosfet

FDMC8676
FDMC8676

April 2015 FDMC86262P P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Semiconductor’s advanced PowerTrench® technology. This Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

 4.3. fdmc86340et80.pdf Size:281K _upd-mosfet

FDMC8676
FDMC8676

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 mΩ at VGS = 10

4.4. fdmc86160et100.pdf Size:293K _upd-mosfet

FDMC8676
FDMC8676

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 mΩ at VGS = 10 V,

 4.5. fdmc86260et150.pdf Size:269K _upd-mosfet

FDMC8676
FDMC8676

January 2015 FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 mΩ at

4.6. fdmc86116lz.pdf Size:318K _fairchild_semi

FDMC8676
FDMC8676

November 2013 FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A that incorporates Shielded Gate technology. This process has Max r

4.7. fdmc86106lz.pdf Size:318K _fairchild_semi

FDMC8676
FDMC8676

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m? Features General Description Max rDS(on) = 103 m? at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m? at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM ESD protect

4.8. fdmc86265p.pdf Size:288K _fairchild_semi

FDMC8676
FDMC8676

May 2014 FDMC86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

4.9. fdmc86244.pdf Size:328K _fairchild_semi

FDMC8676
FDMC8676

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m? Features General Description Max rDS(on) = 134 m? at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m? at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Profile - 1

4.10. fdmc86520l.pdf Size:269K _fairchild_semi

FDMC8676
FDMC8676

August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

4.11. fdmc86260.pdf Size:246K _fairchild_semi

FDMC8676
FDMC8676

December 2012 FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ Features General Description Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

4.12. fdmc86012.pdf Size:245K _fairchild_semi

FDMC8676
FDMC8676

October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features General Description Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A MOSFET construction, the various components of gate charge High p

4.13. fdmc86320.pdf Size:492K _fairchild_semi

FDMC8676
FDMC8676

June 2014 FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

4.14. fdmc86259p.pdf Size:172K _fairchild_semi

FDMC8676
FDMC8676

February 2014 FDMC86259P P-Channel PowerTrench® MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l

4.15. fdmc86570l.pdf Size:373K _fairchild_semi

FDMC8676
FDMC8676

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

4.16. fdmc86520dc.pdf Size:277K _fairchild_semi

FDMC8676
FDMC8676

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 mΩ

4.17. fdmc86102.pdf Size:344K _fairchild_semi

FDMC8676
FDMC8676

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m? at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in P

4.18. fdmc86324.pdf Size:299K _fairchild_semi

FDMC8676
FDMC8676

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m? at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Pow

4.19. fdmc86160.pdf Size:195K _fairchild_semi

FDMC8676
FDMC8676

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 mΩ

4.20. fdmc8622.pdf Size:395K _fairchild_semi

FDMC8676
FDMC8676

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m? Features General Description Max rDS(on) = 56 m? at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m? at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench technology

4.21. fdmc86248.pdf Size:256K _fairchild_semi

FDMC8676
FDMC8676

September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

4.22. fdmc86102lz.pdf Size:260K _fairchild_semi

FDMC8676
FDMC8676

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m? at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD protection lev

4.23. fdmc86139p.pdf Size:382K _fairchild_semi

FDMC8676
FDMC8676

June 2014 FDMC86139P P-Channel PowerTrench® MOSFET -100 V, -15 A, 67 mΩ Features General Description Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A very high density process is especially tailored to minimize Very low RDS-

4.24. fdmc86261p.pdf Size:379K _fairchild_semi

FDMC8676
FDMC8676

June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

4.25. fdmc86340.pdf Size:241K _fairchild_semi

FDMC8676
FDMC8676

January 2014 FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

4.26. fdmc86240.pdf Size:315K _fairchild_semi

FDMC8676
FDMC8676

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m? Features General Description Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max

4.27. fdmc8651.pdf Size:300K _fairchild_semi

FDMC8676
FDMC8676

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m? Features General Description Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profile - 1 mm

4.28. fdmc86102l.pdf Size:313K _fairchild_semi

FDMC8676
FDMC8676

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m? at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

Datasheet: FDMB506P , FDMC6688P , FDMC8010ET30 , FDMC86160ET100 , FDMC86260ET150 , FDMC86262P , FDMC86340ET80 , FDMC86570LET60 , 2SK3562 , FDMC8678S , FDMD85100 , FDMD86100 , FDMD8900 , FDME0106NZT , FDMS0308CS , FDMS8050ET30 , FDMS86150ET100 .

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