FDMD85100 Specs and Replacement

Type Designator: FDMD85100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm

Package: POWER5X6

FDMD85100 substitution

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FDMD85100 datasheet

 ..1. Size:676K  fairchild semi
fdmd85100.pdf pdf_icon

FDMD85100

March 2015 FDMD85100 Dual N-Channel PowerTrench MOSFET Q1 100 V, 48A, 9.9 m Q2 100 V, 48A, 9.9 m Features General Description Q1 N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on... See More ⇒

 8.1. Size:688K  onsemi
fdmd8560l.pdf pdf_icon

FDMD85100

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.2. Size:706K  onsemi
fdmd8530.pdf pdf_icon

FDMD85100

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.3. Size:653K  onsemi
fdmd8540l.pdf pdf_icon

FDMD85100

MOSFET Dual, N-Channel, POWERTRENCH) Q1 40 V, 156 A, 1.5 mW Q2 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N-Channel MOSFETs in a dual VDS rDS(ON) MAX ID MAX Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 mW @ 10 V 156 A rDS(on)/Qg FOM ... See More ⇒

Detailed specifications: FDMC8010ET30, FDMC86160ET100, FDMC86260ET150, FDMC86262P, FDMC86340ET80, FDMC86570LET60, FDMC8676, FDMC8678S, 60N06, FDMD86100, FDMD8900, FDME0106NZT, FDMS0308CS, FDMS8050ET30, FDMS86150ET100, FDMS86202ET120, FDMS86255ET150

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.