FDMS86202ET120 Specs and Replacement
Type Designator: FDMS86202ET120
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 187
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 102
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 8.75
nS
Cossⓘ -
Output Capacitance: 460
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072
Ohm
Package:
POWER56
FDMS86202ET120 substitution
-
MOSFET ⓘ Cross-Reference Search
FDMS86202ET120 datasheet
..1. Size:314K fairchild semi
fdms86202et120.pdf 
January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 102 A, 7.2 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p... See More ⇒
..2. Size:356K onsemi
fdms86202et120.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
5.1. Size:341K fairchild semi
fdms86202.pdf 
July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s... See More ⇒
5.2. Size:386K onsemi
fdms86202.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
6.1. Size:519K 1
fdms86200.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
6.2. Size:453K 1
fdms86201.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
6.3. Size:211K fairchild semi
fdms86200.pdf 
Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance ... See More ⇒
6.4. Size:216K fairchild semi
fdms86201.pdf 
Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r... See More ⇒
6.5. Size:372K fairchild semi
fdms86200dc.pdf 
December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =... See More ⇒
6.6. Size:519K onsemi
fdms86200.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
6.7. Size:913K onsemi
fdms86200dc.pdf 
MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the... See More ⇒
Detailed specifications: FDMC8678S
, FDMD85100
, FDMD86100
, FDMD8900
, FDME0106NZT
, FDMS0308CS
, FDMS8050ET30
, FDMS86150ET100
, IRF840
, FDMS86255ET150
, FDMS86350ET80
, FDMS86369F085
, FDMS86550ET60
, FDMS86568F085
, FDMS8660AS
, FDMS8660S
, FDMS8662
.
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.