FDMS8672AS Specs and Replacement

Type Designator: FDMS8672AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 1040 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: POWER56

FDMS8672AS substitution

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FDMS8672AS datasheet

 ..1. Size:243K  fairchild semi
fdms8672as.pdf pdf_icon

FDMS8672AS

May 2009 FDMS8672AS tm N-Channel PowerTrench SyncFETTM 30V, 28A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advance... See More ⇒

 6.1. Size:242K  fairchild semi
fdms8672s.pdf pdf_icon

FDMS8672AS

May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa... See More ⇒

 7.1. Size:283K  fairchild semi
fdms8670s.pdf pdf_icon

FDMS8672AS

October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva... See More ⇒

 7.2. Size:237K  fairchild semi
fdms8670.pdf pdf_icon

FDMS8672AS

May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T... See More ⇒

Detailed specifications: FDMS86369F085, FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, FDMS8670, FDMS8670AS, IRF640N, FDMS8674, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC, FDMT800152DC, FDN336P-NL

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