FDMS8672AS Specs and Replacement
Type Designator: FDMS8672AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 1040 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: POWER56
FDMS8672AS substitution
- MOSFET ⓘ Cross-Reference Search
FDMS8672AS datasheet
fdms8672as.pdf
May 2009 FDMS8672AS tm N-Channel PowerTrench SyncFETTM 30V, 28A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advance... See More ⇒
fdms8672s.pdf
May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa... See More ⇒
fdms8670s.pdf
October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva... See More ⇒
fdms8670.pdf
May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T... See More ⇒
Detailed specifications: FDMS86369F085, FDMS86550ET60, FDMS86568F085, FDMS8660AS, FDMS8660S, FDMS8662, FDMS8670, FDMS8670AS, IRF640N, FDMS8674, FDMS8690, FDMS8692, FDMS9408F085, FDMT800100DC, FDMT800150DC, FDMT800152DC, FDN336P-NL
Keywords - FDMS8672AS MOSFET specs
FDMS8672AS cross reference
FDMS8672AS equivalent finder
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History: TPCA8010-H
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