FDMT800150DC PDF and Equivalents Search

 ..1. Size:364K  fairchild semi
 fdmt800150dc.pdf

February 2015 FDMT800150DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 99 A, 6.5 m Features General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in ... See More ⇒

 ..2. Size:405K  onsemi
 fdmt800150dc.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:480K  fairchild semi
 fdmt800152dc.pdf

March 2015 FDMT800152DC N-Channel Dual CoolTM PowerTrench MOSFET 150 V, 72 A, 9.0 m Features General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo... See More ⇒

 5.2. Size:510K  onsemi
 fdmt800152dc.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:366K  fairchild semi
 fdmt800100dc.pdf

February 2015 FDMT800100DC N-Channel Dual CoolTM PowerTrench MOSFET 100 V, 162 A, 2.95 m Features General Description Max rDS(on) = 2.95 m at VGS = 10 V, ID = 24 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.46 m at VGS = 6 V, ID = 19 A Semiconductor s advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements... See More ⇒