All MOSFET. IRFPS59N60C Equivalents Search

 

IRFPS59N60C Specs and Replacement


   Type Designator: IRFPS59N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 5140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SUPER247
 

 IRFPS59N60C substitution

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IRFPS59N60C Specs

 ..1. Size:68K  international rectifier
irfps59n60c.pdf pdf_icon

IRFPS59N60C

PD - 90380 PROVISIONAL IRFPS59N60C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.045 59A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Super-247 Avalanche Voltage an... See More ⇒

 9.1. Size:190K  international rectifier
irfps29n60lpbf.pdf pdf_icon

IRFPS59N60C

PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 175m 130ns 29A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications... See More ⇒

 9.2. Size:54K  international rectifier
irfps60n50c.pdf pdf_icon

IRFPS59N60C

PD- 93932 PROVISIONAL IRFPS60N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.038 60A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-247 ... See More ⇒

 9.3. Size:101K  international rectifier
irfps3815.pdf pdf_icon

IRFPS59N60C

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

Detailed specifications: IRFPE50 , IRFPF30 , IRFPF40 , IRFPF50 , IRFPG30 , IRFPG40 , IRFPG50 , IRFPS37N50A , AO4468 , IRFR010 , IRFR012 , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 .

Keywords - IRFPS59N60C MOSFET specs

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