IRFPS59N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFPS59N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6 V
|Id|ⓘ - Maximum Drain Current: 59 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 490(max) nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 5140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SUPER247
IRFPS59N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFPS59N60C Datasheet (PDF)
irfps59n60c.pdf
PD - 90380PROVISIONALIRFPS59N60CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.045 59A High Speed Power SwitchingBenefits Low Gate Charge Qg Reduces DriveRequired Improved Gate Resistance for FasterSwitching Fully Characterized Capacitance andSuper-247Avalanche Voltage an
irfps29n60lpbf.pdf
PD - 95907SMPS MOSFETIRFPS29N60LPbFHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 175m 130ns 29A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications
irfps60n50c.pdf
PD- 93932PROVISIONALIRFPS60N50CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.038 60A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-247
irfps3815.pdf
PD - 93911IRFPS3815HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.015 Fast SwitchingG Fully Avalanche RatedID = 105ASDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resistanc
irfps30n60k.pdf
PD- 94417IRFPS30N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 600V 160m 30Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Super-247Avalanch
irfps37n50apbf.pdf
PD- 95142IRFPS37N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 0.13 36Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan
irfps40n60kpbf.pdf
PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)600V 0.110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/
irfps3810.pdf
PD - 93912BIRFPS3810HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 170A SDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resista
irfps35n50lpbf.pdf
PD- 95140IRFPS35N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.125 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.
irfps43n50k.pdf
PD- 93922BSMPS MOSFETIRFPS43N50KHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078 47A High Speed Power Switching Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characteriz
irfps40n60k.pdf
PD - 94384SMPS MOSFETIRFPS40N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS)600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt RuggednessSUPER TO-
irfps3810pbf.pdf
PD - 95703IRFPS3810PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 170Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve e
irfps37n50a.pdf
PD- 91822CSMPS MOSFETIRFPS37N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre
irfps40n50lpbf.pdf
PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications
irfps40n50l.pdf
PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character
irfps38n60l.pdf
PD - 94630SMPS MOSFETIRFPS38N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 120m 170ns 38A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c
irfps29n60l.pdf
PD - 94622SMPS MOSFETIRFPS29N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 175m 130ns 29A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c
irfps35n50l.pdf
PD- 94227IRFPS35N50LSMPS MOSFETApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply VDSS RDS(on) typ. IDl High Speed Power Switching500V 0.125 34Al ZVS and High Frequency Circuitl PWM InvertersBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessl Fully Ch
irfps3815pbf.pdf
PD - 95896IRFPS3815PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.015l Fast SwitchingGl Fully Avalanche RatedID = 105Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extr
irfps30n60kpbf.pdf
PD- 95906SMPS MOSFETIRFPS30N60KPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 600V 160m 30Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Super-
irfps38n60l sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.12RoHS* Lower Gate Charge Results in Simple DriveCOMPLIANTQg (Max.) (nC) 320 RequirementsQgs (nC) 85 Enhanced dV/dt Capabilities Offer ImprovedRuggedness
irfps43n50k irfps43n50kpbf sihfps43n50k.pdf
IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current
irfps29n60lpbf.pdf
IRFPS29N60L, SiHFPS29N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the NeedVDS (V) 600for External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.175RoHS*Qg (Max.) (nC) 220 Lower Gate Charge Results in Simpler DriveCOMPLIANTQgs (nC) 67 RequirementsQgd (nC) 96 Enhances dV/dt Capabilities Offer Improv
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps40n60k sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
irfps40n50l sihfps40n50l.pdf
IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfps38n60l irfps38n60lpbf sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.12RoHS* Lower Gate Charge Results in Simple DriveCOMPLIANTQg (Max.) (nC) 320 RequirementsQgs (nC) 85 Enhanced dV/dt Capabilities Offer ImprovedRuggedness
irfps35n50lpbf.pdf
IRFPS35N50L, SiHFPS35N50LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.125RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 230COMPLIANTRequirementsQgs (nC) 65 Enhanced dV/dt Capabilities Offer Improved Ruggedne
irfps37n50a sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps43n50k sihfps43n50k.pdf
IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current
irfps40n50lpbf.pdf
"IRFPS40N50LPBF"PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for ext
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf
IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current
irfps30n60kpbf.pdf
IRFPS30N60K, SiHFPS30N60KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.16 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 220COMPLIANTRuggednessQgs (nC) 64 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 110and Current
irfps43n50kpbf.pdf
PD- 95898IRFPS43N50KPbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. IDl Uninterruptible Power Supplyl High Speed Power Switching 500V 0.078 47Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes
irfps37n50a sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps3815pbf.pdf
PD - 95896IRFPS3815PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.015l Fast SwitchingGl Fully Avalanche RatedID = 105Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extr
irfps37n50a.pdf
isc N-Channel MOSFET Transistor IRFPS37N50AFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Datasheet: IRFPE50 , IRFPF30 , IRFPF40 , IRFPF50 , IRFPG30 , IRFPG40 , IRFPG50 , IRFPS37N50A , MDF11N65B , IRFR010 , IRFR012 , IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 .
