FDS7079ZN3 Datasheet and Replacement

February 2004 FDS7079ZN3 30 Volt P-Channel PowerTrench MOSFET Features General Description Advanced P Channel MOSFET combined with 16 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V Advanced SO8 FLMP package providing a device with RDS(ON) = 11.5 m @ VGS = 4.5 V extremely low thermal impedance and improvedelectrical performance. ESD protection diode (note

January 2004 FDS7096N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 14 A, 30 V RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim

February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

February 2004 FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

May 2003 FDS7060N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High perfor

May 2004 FDS7098N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 14 A, 30 V RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High perfor

February 2004 FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig

February 2004 FDS7064N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16.5 A, 30 V RDS(ON) = 7.0 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been o

February 2004 FDS7064SN3 30V N-Channel PowerTrench SyncFET General Description Features 16 A, 30 V RDS(ON) = 8.0 m @ VGS = 10 V The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, RDS(ON) = 9.5 m @ VGS = 4.5 V (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control sw

February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 8 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for

February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe