FDS7079ZN3 Specs and Replacement

Type Designator: FDS7079ZN3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 985 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SO-8

FDS7079ZN3 substitution

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FDS7079ZN3 datasheet

 ..1. Size:182K  fairchild semi
fds7079zn3.pdf pdf_icon

FDS7079ZN3

February 2004 FDS7079ZN3 30 Volt P-Channel PowerTrench MOSFET Features General Description Advanced P Channel MOSFET combined with 16 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V Advanced SO8 FLMP package providing a device with RDS(ON) = 11.5 m @ VGS = 4.5 V extremely low thermal impedance and improved electrical performance. ESD protection diode (note... See More ⇒

 9.1. Size:168K  fairchild semi
fds7096n3.pdf pdf_icon

FDS7079ZN3

January 2004 FDS7096N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 14 A, 30 V RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe... See More ⇒

 9.2. Size:188K  fairchild semi
fds7088sn3.pdf pdf_icon

FDS7079ZN3

August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a ... See More ⇒

 9.3. Size:169K  fairchild semi
fds7064n.pdf pdf_icon

FDS7079ZN3

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim... See More ⇒

Detailed specifications: FDS6694, FDS7060N7, FDS7064N, FDS7064N7, FDS7064SN3, FDS7066ASN3, FDS7066N3, FDS7066N7, IRFZ44, FDS7082N3, FDS7088N3, FDS7088N7, FDS7088SN3, FDS7096N3, FDS7098N3, FDS7288N3, FDS7296N3

Keywords - FDS7079ZN3 MOSFET specs

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