All MOSFET. FDU8876 Datasheet

 

FDU8876 Datasheet and Replacement


   Type Designator: FDU8876
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO-251AA
 

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FDU8876 Datasheet (PDF)

 ..1. Size:468K  fairchild semi
 fdd8876 fdu8876 fdu8876.pdf pdf_icon

FDU8876

NApril 2008FDD8876 / FDU8876tmN-Channel PowerTrench MOSFET30V, 73A, 8.2mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 10m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8876

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8876

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

 8.3. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDU8876

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

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Datasheet: FDU8778 , FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , IRFZ24N , FDU8878 , FDU8880 , FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 .

History: BUK9624-55A | 2SK1446 | SVF2N60CNF | PHD82NQ03LT | BSC084P03NS3G

Keywords - FDU8876 MOSFET datasheet

 FDU8876 cross reference
 FDU8876 equivalent finder
 FDU8876 lookup
 FDU8876 substitution
 FDU8876 replacement

 

 
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