All MOSFET. FDU8876 Datasheet

 

FDU8876 Datasheet and Replacement


   Type Designator: FDU8876
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 73 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO-251AA
      - MOSFET Cross-Reference Search

 

FDU8876 Datasheet (PDF)

 ..1. Size:468K  fairchild semi
 fdd8876 fdu8876 fdu8876.pdf pdf_icon

FDU8876

NApril 2008FDD8876 / FDU8876tmN-Channel PowerTrench MOSFET30V, 73A, 8.2mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 10m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8876

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8876

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

 8.3. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDU8876

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

SHOW MORE

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - FDU8876 MOSFET datasheet

 FDU8876 cross reference
 FDU8876 equivalent finder
 FDU8876 lookup
 FDU8876 substitution
 FDU8876 replacement

 

 
Back to Top

 


 
.