FDU8876 Specs and Replacement

Type Designator: FDU8876

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 91 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO-251AA

FDU8876 substitution

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FDU8876 datasheet

 ..1. Size:468K  fairchild semi
 fdd8876 fdu8876 fdu8876.pdf pdf_icon

FDU8876

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 10m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o... See More ⇒

 8.1. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8876

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

 8.2. Size:503K  fairchild semi
 fdu8874.pdf pdf_icon

FDU8876

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been... See More ⇒

 8.3. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDU8876

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been... See More ⇒

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Detailed specifications: FDU8778, FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, TK10A60D, FDU8878, FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, FDV302PNB8V001

Keywords - FDU8876 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.