FDV304PD87Z Specs and Replacement

Type Designator: FDV304PD87Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: SOT-23

FDV304PD87Z substitution

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FDV304PD87Z datasheet

 7.1. Size:46K  fairchild semi
 fdv304p d87z fdv304p nb8u003.pdf pdf_icon

FDV304PD87Z

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi... See More ⇒

 7.2. Size:63K  fairchild semi
 fdv304p.pdf pdf_icon

FDV304PD87Z

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi... See More ⇒

 7.3. Size:67K  onsemi
 fdv304p.pdf pdf_icon

FDV304PD87Z

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi... See More ⇒

 7.4. Size:1509K  cn vbsemi
 fdv304p.pdf pdf_icon

FDV304PD87Z

FDV304P www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

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Detailed specifications: FDU8880, FDU8882, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, FDV302PNB8V001, FDV303NNB9U008, SI2302, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, FDW256P, FDW258P, FDW262P, FDW264P

Keywords - FDV304PD87Z MOSFET specs

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