FDW264P Specs and Replacement

Type Designator: FDW264P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TSSOP-8

FDW264P substitution

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FDW264P datasheet

 ..1. Size:151K  fairchild semi
 fdw264p.pdf pdf_icon

FDW264P

November 2003 FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 9.7 A, 20 V. RDS(ON) = 10.0 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 14.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications wit... See More ⇒

 9.1. Size:214K  fairchild semi
 fdw262p.pdf pdf_icon

FDW264P

July 2008 FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced 4.5 A, 20 V. RDS(ON) = 47 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 65 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 100 m @ VGS = 1.8 V to ... See More ⇒

 9.2. Size:842K  cn vbsemi
 fdw2601nz.pdf pdf_icon

FDW264P

FDW2601NZ www.VBsemi.tw Dual N-Channel 3 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = 10 V Available 8.6 30 RoHS* 0.019 at VGS = 4.5 V 7.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: FDV304PD87Z, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, FDW256P, FDW258P, FDW262P, 2N60, FDW6923, FDZ201N, FDZ202P, FDZ204P, FDZ206P, FDZ208P, FDZ209N, FDZ291P

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