FDW264P Datasheet and Replacement
Type Designator: FDW264P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 9.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1030 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TSSOP-8
FDW264P substitution
FDW264P Datasheet (PDF)
fdw264p.pdf

November 2003 FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 9.7 A, 20 V. RDS(ON) = 10.0 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications wit
fdw262p.pdf

July 2008 FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced 4.5 A, 20 V. RDS(ON) = 47 m @ VGS = 4.5 V using Fairchild Semiconductors advancedRDS(ON) = 65 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 100 m @ VGS = 1.8 V to
fdw2601nz.pdf

FDW2601NZwww.VBsemi.twDual N-Channel 3 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = 10 V Available8.630RoHS*0.019 at VGS = 4.5 V 7.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RAT
Datasheet: FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P , FDW254PZ , FDW256P , FDW258P , FDW262P , IRF830 , FDW6923 , FDZ201N , FDZ202P , FDZ204P , FDZ206P , FDZ208P , FDZ209N , FDZ291P .
History: NVMTS0D6N04C
Keywords - FDW264P MOSFET datasheet
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History: NVMTS0D6N04C



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