ZVN0540ASTZ MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVN0540ASTZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 0.09 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO-92
ZVN0540ASTZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVN0540ASTZ Datasheet (PDF)
zvn0540astoa zvn0540astob zvn0540astz.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0540a.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0545gta zvn0545gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545astob zvn0545astz.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545a.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545astoa zvn0545astob.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PSMN035-150P | SM3381EHQG | IRF7701GPBF | IRF7469 | IPP60R165CP | VBH40-05B | NCE01P18
History: PSMN035-150P | SM3381EHQG | IRF7701GPBF | IRF7469 | IPP60R165CP | VBH40-05B | NCE01P18
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918