All MOSFET. IRFPS3815PBF Datasheet

 

IRFPS3815PBF Datasheet and Replacement


   Type Designator: IRFPS3815PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 441 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 105 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-274AA
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IRFPS3815PBF Datasheet (PDF)

 ..1. Size:131K  international rectifier
 irfps3815pbf.pdf pdf_icon

IRFPS3815PBF

PD - 95896IRFPS3815PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.015l Fast SwitchingGl Fully Avalanche RatedID = 105Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extr

 5.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS3815PBF

PD - 93911IRFPS3815HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 150V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.015 Fast SwitchingG Fully Avalanche RatedID = 105ASDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resistanc

 6.1. Size:115K  international rectifier
 irfps3810.pdf pdf_icon

IRFPS3815PBF

PD - 93912BIRFPS3810HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 170A SDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve extremely low on-resista

 6.2. Size:173K  international rectifier
 irfps3810pbf.pdf pdf_icon

IRFPS3815PBF

PD - 95703IRFPS3810PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 170Al Lead-FreeSDescriptionThe HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve e

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DM12N65C | H7N1002LM | AP6679GI-HF | ZVN0124ASTOA | SPD04N60S5 | FCPF7N60YDTU

Keywords - IRFPS3815PBF MOSFET datasheet

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