IRFPS3815PBF Specs and Replacement

Type Designator: IRFPS3815PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 441 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1570 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-274AA

IRFPS3815PBF substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFPS3815PBF datasheet

 ..1. Size:131K  international rectifier
 irfps3815pbf.pdf pdf_icon

IRFPS3815PBF

PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 150V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.015 l Fast Switching G l Fully Avalanche Rated ID = 105A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr... See More ⇒

 5.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS3815PBF

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

 6.1. Size:115K  international rectifier
 irfps3810.pdf pdf_icon

IRFPS3815PBF

PD - 93912B IRFPS3810 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 170A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista... See More ⇒

 6.2. Size:173K  international rectifier
 irfps3810pbf.pdf pdf_icon

IRFPS3815PBF

PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 170A l Lead-Free S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e... See More ⇒

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Detailed specifications: IRFPG42, IRFPG50PBF, IRFPG52, IRFPS29N60LPBF, IRFPS30N60KPBF, IRFPS35N50LPBF, IRFPS37N50APBF, IRFPS3810PBF, IRF1010E, IRFPS38N60L, IRFPS38N60LPBF, IRFPS40N50L, IRFPS40N50LPBF, IRFPS40N60K, IRFPS40N60KPBF, IRFPS43N50K, IRFPS43N50KPBF

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.