IRFPS38N60L Specs and Replacement

Type Designator: IRFPS38N60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-274AA

IRFPS38N60L substitution

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IRFPS38N60L datasheet

 ..1. Size:167K  international rectifier
 irfps38n60l.pdf pdf_icon

IRFPS38N60L

PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c... See More ⇒

 ..2. Size:185K  vishay
 irfps38n60l sihfps38n60l.pdf pdf_icon

IRFPS38N60L

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒

 ..3. Size:187K  vishay
 irfps38n60l irfps38n60lpbf sihfps38n60l.pdf pdf_icon

IRFPS38N60L

IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒

 7.1. Size:101K  international rectifier
 irfps3815.pdf pdf_icon

IRFPS38N60L

PD - 93911 IRFPS3815 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.015 Fast Switching G Fully Avalanche Rated ID = 105A S Description The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

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Detailed specifications: IRFPG50PBF, IRFPG52, IRFPS29N60LPBF, IRFPS30N60KPBF, IRFPS35N50LPBF, IRFPS37N50APBF, IRFPS3810PBF, IRFPS3815PBF, IRFB3607, IRFPS38N60LPBF, IRFPS40N50L, IRFPS40N50LPBF, IRFPS40N60K, IRFPS40N60KPBF, IRFPS43N50K, IRFPS43N50KPBF, IRFRC20PBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.