ZVN2110ASTOA Specs and Replacement

Type Designator: ZVN2110ASTOA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-92

ZVN2110ASTOA substitution

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ZVN2110ASTOA datasheet

 ..1. Size:61K  diodes
 zvn2110astoa zvn2110astob zvn2110astz.pdf pdf_icon

ZVN2110ASTOA

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 6.1. Size:66K  diodes
 zvn2110a.pdf pdf_icon

ZVN2110ASTOA

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 7.1. Size:48K  diodes
 zvn2110g.pdf pdf_icon

ZVN2110ASTOA

SOT223 N-CHANNEL ENHANCEMENT ZVN2110G MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES D * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED = V V V S V V D PARTMARKING DETAIL - ZVN2110 G COMPLEMENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 500 mA Pulsed Drain... See More ⇒

 7.2. Size:37K  diodes
 zvn2110gta zvn2110gtc.pdf pdf_icon

ZVN2110ASTOA

SOT223 N-CHANNEL ENHANCEMENT ZVN2110G MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES D * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED = V V V S V V D PARTMARKING DETAIL - ZVN2110 G COMPLEMENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 500 mA Pulsed Drain... See More ⇒

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Detailed specifications: ZVN0545GTA, ZVN0545GTC, ZVN2106ASTOA, ZVN2106ASTOB, ZVN2106ASTZ, ZVN2106B, ZVN2106GTA, ZVN2106GTC, 7N60, ZVN2110ASTOB, ZVN2110ASTZ, ZVN2110GTA, ZVN2110GTC, ZVN2120GTA, ZVN2120GTC, ZVN3306ASTOA, ZVN3306ASTOB

Keywords - ZVN2110ASTOA MOSFET specs

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