ZVN4525GTA Datasheet and Replacement
Type Designator: ZVN4525GTA
Marking Code: ZVN4525G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id| ⓘ - Maximum Drain Current: 0.31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 2.6 nC
tr ⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: SOT-223
ZVN4525GTA substitution
ZVN4525GTA Datasheet (PDF)
zvn4525gta zvn4525gtc.pdf
ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
zvn4525g.pdf
ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
zvn4525e6.pdf
ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
zvn4525z.pdf
ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
Datasheet: ZVN4424ASTOA , ZVN4424ASTOB , ZVN4424C , ZVN4424GTA , ZVN4424GTC , ZVN4424ZTA , ZVN4525E6TA , ZVN4525E6TC , 2SK3568 , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC , ZVNL120ASTOA .
Keywords - ZVN4525GTA MOSFET datasheet
ZVN4525GTA cross reference
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