ZVP4424GTC MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZVP4424GTC
   Marking Code: ZVP4424
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 240 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: SOT-223

ZVP4424GTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZVP4424GTC Datasheet (PDF)

..1. Size:113K diodes
zvp4424gta zvp4424gtc.pdf

SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta

6.1. Size:140K diodes
zvp4424g.pdf

7.1. Size:113K diodes
zvp4424a.pdf

P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V

7.2. Size:104K diodes
zvp4424z.pdf

SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT

7.3. Size:101K diodes
zvp4424zta.pdf