IRFR230A MOSFET. Datasheet pdf. Equivalent

IRFR230A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFR230A Datasheet (PDF)

1.1. irfr230a.pdf Size:502K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

3.1. irfr230btm am002.pdf Size:637K _upd-mosfet

IRFR230B / IRFU230B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 22 pF) This advanced technology has been especially tailored to • Fast switc

3.2. irfr2307zpbf.pdf Size:352K _upd-mosfet

PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mΩ G Description ID = 42A This HEXFET® Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi

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