All MOSFET. IRFR230A Datasheet


IRFR230A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR230A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: DPAK

IRFR230A Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFR230A Datasheet (PDF)

1.1. irfr230a.pdf Size:502K _samsung


 Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

3.1. irfr230btm am002.pdf Size:637K _fairchild_semi


IRFR230B / IRFU230B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 22 pF) This advanced technology has been especially tailored to • Fast switc

3.2. irfr2307zpbf irfu2307zpbf.pdf Size:352K _international_rectifier


PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mΩ G Description ID = 42A This HEXFET® Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi

 3.3. auirfr2307ztr.pdf Size:298K _international_rectifier


PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET® Power MOSFET ● Advanced Process Technology ● Ultra Low On-Resistance D V(BR)DSS 75V ● 175°C Operating Temperature RDS(on) max. 16mΩ ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotive Qualified * Desc

3.4. irfr2307z.pdf Size:241K _inchange_semiconductor


isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V

Datasheet: IRFR212 , IRFR214 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFP064N , IRFR310 , IRFR310A , IRFR320 , IRFR320A , IRFR3303 , IRFR3910 , IRFR410 , IRFR4105 .


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