ZXM61P03FTA Datasheet. Specs and Replacement

Type Designator: ZXM61P03FTA  📄📄 

Marking Code: P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

Qg ⓘ - Total Gate Charge: 4.8 nC

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT-23

ZXM61P03FTA substitution

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ZXM61P03FTA datasheet

 ..1. Size:269K  zetex
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ZXM61P03FTA

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT... See More ⇒

 4.1. Size:269K  zetex
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ZXM61P03FTA

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT... See More ⇒

 5.1. Size:270K  diodes
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ZXM61P03FTA

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT... See More ⇒

 5.2. Size:92K  tysemi
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ZXM61P03FTA

Product specification ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Lo... See More ⇒

Detailed specifications: ZXM41N10FTA, ZXM41N10FTC, ZXM61N02FTA, ZXM61N02FTC, ZXM61N03FTA, ZXM61N03FTC, ZXM61P02FTA, ZXM61P02FTC, 50N06, ZXM61P03FTC, ZXM62N02E6TA, ZXM62N03E6TA, ZXM62N03GTA, ZXM62P02E6TA, ZXM62P03E6TA, ZXM62P03GTA, ZXM64N02XTA

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