ZXM62N02E6TA Datasheet. Specs and Replacement

Type Designator: ZXM62N02E6TA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Electrical Characteristics

tr ⓘ - Rise Time: 10.4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23-6

ZXM62N02E6TA substitution

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ZXM62N02E6TA datasheet

 ..1. Size:185K  zetex
 zxm62n02e6ta.pdf pdf_icon

ZXM62N02E6TA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r... See More ⇒

 4.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N02E6TA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r... See More ⇒

 4.2. Size:153K  diodes
 zxm62n02e6 2n02sot23-6.pdf pdf_icon

ZXM62N02E6TA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r... See More ⇒

 7.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N02E6TA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist... See More ⇒

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Detailed specifications: ZXM61N02FTA, ZXM61N02FTC, ZXM61N03FTA, ZXM61N03FTC, ZXM61P02FTA, ZXM61P02FTC, ZXM61P03FTA, ZXM61P03FTC, IRFZ44, ZXM62N03E6TA, ZXM62N03GTA, ZXM62P02E6TA, ZXM62P03E6TA, ZXM62P03GTA, ZXM64N02XTA, ZXM64N02XTC, ZXM64N035GTA

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