All MOSFET. ZXM62P03GTA Datasheet

 

ZXM62P03GTA Datasheet and Replacement


   Type Designator: ZXM62P03GTA
   Marking Code: ZXM62P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.2 nC
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-223
 

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ZXM62P03GTA Datasheet (PDF)

 ..1. Size:286K  zetex
 zxm62p03gta.pdf pdf_icon

ZXM62P03GTA

ZXM62P03G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistance

 6.1. Size:281K  diodes
 zxm62p03e6.pdf pdf_icon

ZXM62P03GTA

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 6.2. Size:285K  zetex
 zxm62p03e6ta.pdf pdf_icon

ZXM62P03GTA

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 7.1. Size:178K  diodes
 zxm62p02e6.pdf pdf_icon

ZXM62P03GTA

ZXM62P02E620V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.20 ; I =-2.3A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low o

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Datasheet: ZXM61P02FTC , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , IRF630 , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA .

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