All MOSFET. ZXM66P03N8TA Datasheet

 

ZXM66P03N8TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXM66P03N8TA
   Marking Code: ZXM66P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 16.3 nS
   Cossⓘ - Output Capacitance: 743 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8

 ZXM66P03N8TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXM66P03N8TA Datasheet (PDF)

 ..1. Size:64K  zetex
 zxm66p03n8ta.pdf

ZXM66P03N8TA ZXM66P03N8TA

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 ..2. Size:831K  cn vbsemi
 zxm66p03n8ta.pdf

ZXM66P03N8TA ZXM66P03N8TA

ZXM66P03N8TAwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

 4.1. Size:65K  diodes
 zxm66p03n8.pdf

ZXM66P03N8TA ZXM66P03N8TA

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.1. Size:610K  diodes
 zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf

ZXM66P03N8TA ZXM66P03N8TA

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 9.1. Size:81K  zetex
 zxm66n03n8ta.pdf

ZXM66P03N8TA ZXM66P03N8TA

ZXM66N03N830V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=30V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

 9.2. Size:78K  zetex
 zxm66n02n8ta.pdf

ZXM66P03N8TA ZXM66P03N8TA

ZXM66N02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY=20V; RDS(ON)=0.015 =9A(BR)DSS DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power SO8management applications.FEATURES Low on-resistance

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