ZXMN10A08E6TC Datasheet. Specs and Replacement

Type Designator: ZXMN10A08E6TC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 28.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT-26

ZXMN10A08E6TC substitution

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ZXMN10A08E6TC datasheet

 ..1. Size:174K  diodes
 zxmn10a08e6ta zxmn10a08e6tc.pdf pdf_icon

ZXMN10A08E6TC

A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25 C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t... See More ⇒

 3.1. Size:234K  diodes
 zxmn10a08e6.pdf pdf_icon

ZXMN10A08E6TC

A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9A Mechanical Data Case SOT23-6 ... See More ⇒

 5.1. Size:179K  diodes
 zxmn10a08dn8.pdf pdf_icon

ZXMN10A08E6TC

ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 5.2. Size:441K  diodes
 zxmn10a08g.pdf pdf_icon

ZXMN10A08E6TC

ZXMN10A08G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.9 100 0.300 @ VGS= 6V 2.6 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r... See More ⇒

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Detailed specifications: ZXM66P02N8TC, ZXM66P03N8TA, ZXMD63C02X, ZXMN0545G4TA, ZXMN10A07FTA, ZXMN10A07FTC, ZXMN10A07ZTA, ZXMN10A08E6TA, IRLB4132, ZXMN10A09KTC, ZXMN10A11GTA, ZXMN10A11GTC, ZXMN10A11KTC, ZXMN10A25GTA, ZXMN10A25KTC, ZXMN10B08E6TA, ZXMN10B08E6TC

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