ZXMN10A11GTA MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN10A11GTA
Marking Code: ZXMN10A11
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT-223
ZXMN10A11GTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN10A11GTA Datasheet (PDF)
zxmn10a11gtc zxmn10a11g zxmn10a11gta.pdf
A Product Line ofDiodes IncorporatedZXMN10A11G100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS = 10V 2.4A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6.0V 2.1A Mechanical Data Case: SOT2
zxmn10a11g.pdf
ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID BVDSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance 350m @ VGS = 10V 2.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 100V 450m @ VGS = 6.0V 2.1A Halogen and Antimony Free. Green Device (Note 3) Qualifie
zxmn10a11k zxmn10a11ktc.pdf
A Product Line ofDiodes IncorporatedZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25C Green Component and RoHS compliant (Note 1) 350m @ VGS = 10V 3.5A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6V 3.1A
zxmn10a08e6ta zxmn10a08e6tc.pdf
A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t
zxmn10a07fta zxmn10a07ftc.pdf
A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
zxmn10a25k.pdf
ZXMN10A25K100V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) (V) ID (A)0.125 @ VGS= 10V 6.41000.150 @ VGS= 6V 5.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc
zxmn10a09k.pdf
A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
zxmn10a07zta.pdf
A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not
zxmn10a07z.pdf
ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance
zxmn10a08e6.pdf
A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6
zxmn10a08dn8.pdf
ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc
zxmn10a07f.pdf
ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance
zxmn10a25g.pdf
ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
zxmn10a08g.pdf
ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r
zxmn10a09k zxmn10a09ktc.pdf
A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
zxmn10a25ktc.pdf
A Product Line ofDiodes IncorporatedGreenZXMN10A25K100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note
zxmn10a08g.pdf
SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete
zxmn10a25gta.pdf
ZXMN10A25G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.125 @ VGS= 10V 41000.150 @ VGS= 6V 3.7DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure which combininthe benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resist
zxmn10a07zta.pdf
ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
