ZXMN2A01FTC Datasheet. Specs and Replacement

Type Designator: ZXMN2A01FTC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.21 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT-23

ZXMN2A01FTC substitution

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ZXMN2A01FTC datasheet

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ZXMN2A01FTC

Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒

Detailed specifications: ZXMN10A25KTC, ZXMN10B08E6TA, ZXMN10B08E6TC, ZXMN15A27KTC, ZXMN20B28KTC, ZXMN2A01E6TA, ZXMN2A01E6TC, ZXMN2A01FTA, AON6380, ZXMN2A02N8TA, ZXMN2A02X8TA, ZXMN2A02X8TC, ZXMN2A03E6TA, ZXMN2A03E6TC, ZXMN2A14FTA, ZXMN2B01FTA, ZXMN2B03E6TA

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