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ZXMN2A01FTC Spec and Replacement


   Type Designator: ZXMN2A01FTC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.21 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23

 ZXMN2A01FTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN2A01FTC Specs

 ..1. Size:216K  zetex
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ZXMN2A01FTC

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 5.1. Size:217K  diodes
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 5.2. Size:79K  tysemi
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ZXMN2A01FTC

Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒

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Detailed specifications: ZXMN10A25KTC , ZXMN10B08E6TA , ZXMN10B08E6TC , ZXMN15A27KTC , ZXMN20B28KTC , ZXMN2A01E6TA , ZXMN2A01E6TC , ZXMN2A01FTA , AON6380 , ZXMN2A02N8TA , ZXMN2A02X8TA , ZXMN2A02X8TC , ZXMN2A03E6TA , ZXMN2A03E6TC , ZXMN2A14FTA , ZXMN2B01FTA , ZXMN2B03E6TA .

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