IRFR3303 Datasheet and Replacement

PD - 95070AIRFR3303PbFIRFU3303PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR3303)Dl Straight Lead (IRFU3033)VDSS = 30Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.031l Fully Avalanche RatedGl Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

PD - 95070AIRFR3303PbFIRFU3303PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Surface Mount (IRFR3303)Dl Straight Lead (IRFU3033)VDSS = 30Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.031l Fully Avalanche RatedGl Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

PD - 9.1642AIRFR/U3303HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR3303)VDSS = 30V Straight Lead (IRFU3033) Advanced Process TechnologyRDS(on) = 0.031 Fast SwitchingG Fully Avalanche RatedID = 33A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

PD - 94373IRFR3412IRFU3412SMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D-Pak

AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des

PD-95013AIRFR320PbFIRFU320PbF Lead-Free12/13/04Document Number: 91273 www.vishay.com1IRFR/U320PbFDocument Number: 91273 www.vishay.com2IRFR/U320PbFDocument Number: 91273 www.vishay.com3IRFR/U320PbFDocument Number: 91273 www.vishay.com4IRFR/U320PbFDocument Number: 91273 www.vishay.com5IRFR/U320PbFDocument Number: 91273 www.vishay.com6IRFR/U320

PD - 94452IRFR3418 IRFU3418HEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC converters80V 14m 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3418 IRFU3418A

PD - 94505IRFR3410 IRFU3410HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3410 IRFU

PD - 94272IRFR3911SMPS MOSFET IRFU3911HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.115 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3

PD - 95071AIRFR3708PbFSMPS MOSFETIRFU3708PbFHEXFET Power MOSFETApplicationsl High Frequency DC-DC Isolated ConvertersVDSS RDS(on) max IDwith Synchronous Rectification for Telecom 30V 12.5m 61Aand Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak I-P

PD - 95019AIRFR3707PbFSMPS MOSFETIRFRU3707PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 13m 61Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully Characterized Ava

PD - 94499AAUTOMOTIVE MOSFET IRFR3504IRFU3504FeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 9.2mGDescriptionSpecifically designed for Automotive applications, this HEXFETID = 30APower MOSFET utilizes the l

PD - 91364BIRFR/U3910HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR3910)VDSS = 100V Straight Lead (IRFU3910) Advanced Process TechnologyRDS(on) = 0.115 Fast SwitchingG Fully Avalanche RatedID = 16ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resi

PD-95013AIRFR320PbFIRFU320PbF Lead-Freewww.irf.com 112/13/04IRFR/U320PbF2 www.irf.comIRFR/U320PbFwww.irf.com 3IRFR/U320PbF4 www.irf.comIRFR/U320PbFwww.irf.com 5IRFR/U320PbF6 www.irf.comIRFR/U320PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent

PD - 94648IRFR3707ZIRFU3707ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 9.5m: 9.6nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche

PD - 94651AIRFR_U3711ZIRFR_U3711ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m: 18nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avala

PD - 96046IRFR3709ZCPbFIRFU3709ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

PD - 97312BIRFR3607PbFIRFU3607PbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power SupplyDVDSS 75Vl High Speed Power Switchingl Hard Switched and High Frequency CircuitsRDS(on) typ. 7.34m max. 9.0mGID (Silicon Limited) 80ABenefitsl Improved Gate, Avalanche and DynamicS ID (Package Limited) 56Adv

PD - 95074AIRFR3711ZPbFIRFU3711ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-PakI

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 95511BIRFR3505PbFIRFU3505PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013G Lead-FreeID = 30ASDescriptionThis HEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resis

PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

PD - 95079AIRFR3910PbFIRFU3910PbF Lead-Freewww.irf.com 11/7/05IRFR/U3910PbF2 www.irf.comIRFR/U3910PbFwww.irf.com 3IRFR/U3910PbF4 www.irf.comIRFR/U3910PbFwww.irf.com 5IRFR/U3910PbF6 www.irf.comIRFR/U3910PbFwww.irf.com 7IRFR/U3910PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv

PD - 95516AIRFR3418PbF IRFU3418PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC convertersl Lead-Free 14m 30A80VBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

PD - 95315BIRFR3504PbFIRFU3504PbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating TemperatureD Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 9.2mGDescriptionThis HEXFET Power MOSFET utilizes the latest processingID = 30Atechniques to achieve extremely low on-resistan

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

PD - 95371BIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

PD - 95028AIRFR310PbFIRFU310PbF Lead-Free12/10/04Document Number: 91272 www.vishay.com1IRFR/U310PbFDocument Number: 91272 www.vishay.com2IRFR/U310PbFDocument Number: 91272 www.vishay.com3IRFR/U310PbFDocument Number: 91272 www.vishay.com4IRFR/U310PbFDocument Number: 91272 www.vishay.com5IRFR/U310PbFDocument Number: 91272 www.vishay.com6IRFR/U3

PD - 96045IRFR3707ZCPbFIRFU3707ZCPbFApplicationsl High Frequency Synchronous Buck HEXFET Power MOSFETConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification30V 9.5m 9.6nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

PD - 94506AIRFR3505AUTOMOTIVE MOSFETIRFU3505HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.013 Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 30ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilize

PD - 95442AIRFR3704ZPbFIRFU3704ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification20V 8.4m 9.3nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pak

PD - 96065IRFR3706CPbFSMPS MOSFETIRFU3706CPbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGS D-Pak

PD - 94523IRFR3518 IRFU3518HEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max ID 80V 29mW 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3518 IRFU3518

PD - 93933BIRFR3706SMPS MOSFETIRFU3706HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High Frequency Isolated DC-DC 20V 9.0m 75A Converters with Synchronous Rectification for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor PowerBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Fully Characterized Avalan

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

PD - 93934BIRFR3707SMPS MOSFETIRFU3707ApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltageand Current

PD - 96050IRFR3711ZCPbFIRFU3711ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical

PD - 94393IRFR3411IRFU3411 Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 100V 175C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques toachieve extremely low on-

PD - 93935BIRFR3708SMPS MOSFETIRFU3708HEXFET Power MOSFETApplications High Frequency DC-DC Isolated ConvertersVDSS RDS(on) max IDwith Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Vol

PD - 95521BIRFR3504ZPbFIRFU3504ZPbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 9.0m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

PD - 95373AIRFR3911PbFSMPS MOSFET IRFU3911PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.115 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I

PD - 95498AIRFR3412PbFIRFU3412PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness D-Pak I-Pakl Fully Cha

PD - 95034AIRFR3704PbFSMPS MOSFETIRFU3704PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully

PD- 95073AIRFR3711PbFSMPS MOSFETIRFU3711PbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive InducedTu

PD - 93887DIRFR3704SMPS MOSFETIRFU3704ApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 20V 9.5m 75Afor Telecom and Industrial usel High Frequency Buck Converters for Computer Processor Powerl 100% RG TestedBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully Characterized Aval

PD - 97313IRFR3806PbFIRFU3806PbFApplicationsl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingDVDSS60Vl Hard Switched and High Frequency CircuitsRDS(on) typ. 12.6mGmax. 15.8mBenefitsID 43ASl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized C

PD - 95510AIRFR3518PbF IRFU3518PbFHEXFET Power MOSFETApplicationsl High frequency DC-DC convertersVDSS RDS(on) max IDl Lead-Free 80V 29mW 30ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

PD - 95097AIRFR3706PbFSMPS MOSFETIRFU3706PbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Fully Ch

PD- 94061BIRFR3711SMPS MOSFETIRFU3711ApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-on

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V (Typ.) Lower RDS(ON) : 1.408 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

IRFR310, IRFU310, SiHFR310, SiHFU310www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310)Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast SwitchingQgd (nC) 6.5 Ful

IRFR310, IRFU310, SiHFR310, SiHFU310Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS* Surface Mount (IRFR310/SiHFR310)Qg (Max.) (nC) 12COMPLIANT Straight Lead (IRFU310/SiHFU310)Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5Configuration S

IRFR320, IRFU320, SiHFR320, SiHFU320Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS* Surface Mount (IRFR320/SiHFR320)Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFU320/SiHFU320)Qgs (nC) 3.3 Available in Tape and ReelQgd (nC) 11 Fast Switching

IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF

AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc

IRFR320, IRFU320, SiHFR320, SiHFU320www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated Surface Mount (IRFR320,SiHFR320)RDS(on) ()VGS = 10 V 1.8 Straight Lead (IRFU320,SiHFU320)Qg (Max.) (nC) 20 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description

IRFR3410N-Channel Enhancement Mode MOSFETDescriptionThe IRFR3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This DSdevice is suitable for use as a GBattery protection or in other Switching application. TO-252-2LGeneral Features V = 100V I = 30A DS DPIN2 D R

IRFR3709ZTwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETAB

IRFR3708TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

IRFR310Pwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

IRFR3910TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

IRFR3411PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un

IRFR3710ZTRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

IRFR3411TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

IRFR3709ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

IRFR310Twww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS d

IRFR3707ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS

IRFR3709ZCTwww.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET

IRFR3410TRwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

iscN-Channel MOSFET Transistor IRFR320FEATURESLow drain-source on-resistance:RDS(ON) 1.8 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710ZFEATURESStatic drain-source on-resistance:RDS(on)18mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410FEATURESStatic drain-source on-resistance:RDS(on)39mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910FEATURESStatic drain-source on-resistance:RDS(on)115mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704ZFEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor IRFR3707Z, IIRFR3707ZFEATURESStatic drain-source on-resistance:RDS(on)9.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711ZFEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc N-Channel MOSFET Transistor IRFR3709ZC, IIRFR3709ZCFEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor IRFR3806, IIRFR3806FEATURESStatic drain-source on-resistance:RDS(on)15.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 V

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504ZFEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate

isc N-Channel MOSFET Transistor IRFR3505, IIRFR3505FEATURESStatic drain-source on-resistance:RDS(on)13mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

isc N-Channel MOSFET Transistor IRFR3607, IIRFR3607FEATURESStatic drain-source on-resistance:RDS(on)9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

isc N-Channel MOSFET Transistor IRFR3518, IIRFR3518FEATURESStatic drain-source on-resistance:RDS(on)29mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-

isc N-Channel MOSFET Transistor IRFR3711, IIRFR3711FEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Buck Converters For Server Processor PowerSynchronous FETABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

iscN-Channel MOSFET Transistor IRFR310FEATURESLow drain-source on-resistance:RDS(ON) 3.6 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411FEATURESStatic drain-source on-resistance:RDS(on)44mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFR3607PbFFEATURESWith TO-252(DPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

isc N-Channel MOSFET Transistor IRFR3708, IIRFR3708FEATURESStatic drain-source on-resistance:RDS(on)12.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc N-Channel MOSFET Transistor IRFR3709Z, IIRFR3709ZFEATURESStatic drain-source on-resistance:RDS(on)6.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA