All MOSFET. ZXMN2A02X8TA Datasheet

 

ZXMN2A02X8TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN2A02X8TA
   Marking Code: ZXMN2A02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MSOP8

 ZXMN2A02X8TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN2A02X8TA Datasheet (PDF)

 ..1. Size:246K  zetex
 zxmn2a02x8ta.pdf

ZXMN2A02X8TA ZXMN2A02X8TA

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 3.1. Size:246K  zetex
 zxmn2a02x8tc.pdf

ZXMN2A02X8TA ZXMN2A02X8TA

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 4.1. Size:247K  diodes
 zxmn2a02x8.pdf

ZXMN2A02X8TA ZXMN2A02X8TA

ZXMN2A02X820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.MSOP8FEATURES Low on-resistance

 6.1. Size:158K  diodes
 zxmn2a02n8.pdf

ZXMN2A02X8TA ZXMN2A02X8TA

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

 6.2. Size:154K  zetex
 zxmn2a02n8ta.pdf

ZXMN2A02X8TA ZXMN2A02X8TA

ZXMN2A02N820V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SO8FEATURES Low on-resistance

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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