All MOSFET. IRFR3910 Datasheet

 

IRFR3910 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR3910

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO252AA

IRFR3910 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFR3910 PDF doc:

1.1. irfr3910.pdf Size:141K _international_rectifier

IRFR3910
IRFR3910

PD - 91364B IRFR/U3910 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR3910) VDSS = 100V Straight Lead (IRFU3910) Advanced Process Technology RDS(on) = 0.115? Fast Switching G Fully Avalanche Rated ID = 16A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

3.1. irfr3911.pdf Size:102K _international_rectifier

IRFR3910
IRFR3910

PD - 94272 IRFR3911 SMPS MOSFET IRFU3911 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.115? 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3911 IR

5.1. irfr3706.pdf Size:133K _international_rectifier

IRFR3910
IRFR3910

PD - 93936A IRFR3706 SMPS MOSFET IRFU3706 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC 20V 9.0m? 75A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage D

5.2. irfr3707.pdf Size:136K _international_rectifier

IRFR3910
IRFR3910

PD - 93934B IRFR3707 SMPS MOSFET IRFU3707 Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m? 61A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-P

5.3. irfr320.pdf Size:177K _international_rectifier

IRFR3910
IRFR3910

5.4. irfr3410.pdf Size:140K _international_rectifier

IRFR3910
IRFR3910

PD - 94505 IRFR3410 IRFU3410 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m? 31A† Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU3410 Ab

5.5. irfr310.pdf Size:173K _international_rectifier

IRFR3910
IRFR3910

5.6. irfr3711z.pdf Size:215K _international_rectifier

IRFR3910
IRFR3910

PD - 94651A IRFR_U3711Z IRFR_U3711Z Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 20V 5.7m: 18nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche

5.7. irfr3505.pdf Size:588K _international_rectifier

IRFR3910
IRFR3910

PD - 94506A IRFR3505 AUTOMOTIVE MOSFET IRFU3505 HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 0.013? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest proce

5.8. irfr3518.pdf Size:547K _international_rectifier

IRFR3910
IRFR3910

PD - 94523 IRFR3518 IRFU3518 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3518 IRFU3518 Abs

5.9. irfr3303.pdf Size:112K _international_rectifier

IRFR3910
IRFR3910

PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR3303) VDSS = 30V Straight Lead (IRFU3033) Advanced Process Technology RDS(on) = 0.031? Fast Switching G Fully Avalanche Rated ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

5.10. irfr3411.pdf Size:112K _international_rectifier

IRFR3910
IRFR3910

PD - 94393 IRFR3411 IRFU3411 Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 100V 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44m? G Description Advanced HEXFET® Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

5.11. irfr3412.pdf Size:139K _international_rectifier

IRFR3910
IRFR3910

PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025? 48A† l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D-Pak I-Pak

5.12. irfr3708.pdf Size:129K _international_rectifier

IRFR3910
IRFR3910

PD - 93935B IRFR3708 SMPS MOSFET IRFU3708 HEXFET® Power MOSFET Applications High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m? 61A and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage

5.13. irfr3418.pdf Size:546K _international_rectifier

IRFR3910
IRFR3910

PD - 94452 IRFR3418 IRFU3418 HEXFET® Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters 80V 14m 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3418 IRFU3418 Absol

5.14. irfr3707z.pdf Size:215K _international_rectifier

IRFR3910
IRFR3910

PD - 94648 IRFR3707Z IRFU3707Z Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 9.5m: 9.6nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Vol

5.15. irfr310pbf_irfu310pbf.pdf Size:1830K _international_rectifier

IRFR3910
IRFR3910

PD - 95028A IRFR310PbF IRFU310PbF • Lead-Free 12/10/04 Document Number: 91272 www.vishay.com 1 IRFR/U310PbF Document Number: 91272 www.vishay.com 2 IRFR/U310PbF Document Number: 91272 www.vishay.com 3 IRFR/U310PbF Document Number: 91272 www.vishay.com 4 IRFR/U310PbF Document Number: 91272 www.vishay.com 5 IRFR/U310PbF Document Number: 91272 www.vishay.com 6 IRFR/U310PbF

5.16. irfr0xx_irfr1xx_irfr2xx_irfr3xx_irfr420_irfr9xx_.pdf Size:86K _international_rectifier

IRFR3910



5.17. irfr3711.pdf Size:239K _international_rectifier

IRFR3910
IRFR3910

PD- 94061 IRFR3711 SMPS MOSFET IRFU3711 HEXFET® Power MOSFET Applications High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.5m? 110A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Be

5.18. irfr320pbf_irfu320pbf.pdf Size:1849K _international_rectifier

IRFR3910
IRFR3910

PD-95013A IRFR320PbF IRFU320PbF • Lead-Free 12/13/04 Document Number: 91273 www.vishay.com 1 IRFR/U320PbF Document Number: 91273 www.vishay.com 2 IRFR/U320PbF Document Number: 91273 www.vishay.com 3 IRFR/U320PbF Document Number: 91273 www.vishay.com 4 IRFR/U320PbF Document Number: 91273 www.vishay.com 5 IRFR/U320PbF Document Number: 91273 www.vishay.com 6 IRFR/U320PbF

5.19. irfr3504.pdf Size:593K _international_rectifier

IRFR3910
IRFR3910

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 Features HEXFET® Power MOSFET ? Advanced Process Technology ? Ultra Low On-Resistance D ? 175°C Operating Temperature VDSS = 40V ? Fast Switching ? Repetitive Avalanche Allowed up to Tjmax RDS(on) = 9.2m? G Description Specifically designed for Automotive applications, this HEXFET® ID = 30A Power MOSFET utilizes the latest processing t

5.20. irfr3704.pdf Size:115K _international_rectifier

IRFR3910
IRFR3910

PD - 93887B IRFR3704 SMPS MOSFET IRFU3704 HEXFET® Power MOSFET Applications High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m? 75A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current

5.21. irfr310a.pdf Size:501K _samsung

IRFR3910
IRFR3910

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ Low RDS(ON) : 2.815 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

5.22. irfr330a.pdf Size:506K _samsung

IRFR3910
IRFR3910

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 0.765 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

5.23. irfr320a.pdf Size:503K _samsung

IRFR3910
IRFR3910

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? (Typ.) Lower RDS(ON) : 1.408 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.24. irfr320_irfu320_sihfr320_sihfu320.pdf Size:1555K _vishay

IRFR3910
IRFR3910

IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* • Surface Mount (IRFR320/SiHFR320) Qg (Max.) (nC) 20 COMPLIANT • Straight Lead (IRFU320/SiHFU320) Qgs (nC) 3.3 • Available in Tape and Reel Qgd (nC) 11 • Fast Switching Configuration

5.25. irfr310_irfu310_sihfr310_sihfu310.pdf Size:1412K _vishay

IRFR3910
IRFR3910

IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.6 RoHS* • Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT • Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 • Available in Tape and Reel Qgd (nC) 6.5 Configuration Single • Fast

Datasheet: IRFR224 , IRFR224A , IRFR230A , IRFR310 , IRFR310A , IRFR320 , IRFR320A , IRFR3303 , IRF4905 , IRFR410 , IRFR4105 , IRFR411 , IRFR420 , IRFR420A , IRFR5305 , IRFR5410 , IRFR5505 .

 


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