ZXMN2F34MATA Datasheet. Specs and Replacement

Type Designator: ZXMN2F34MATA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: DFN322

ZXMN2F34MATA substitution

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ZXMN2F34MATA datasheet

 ..1. Size:404K  zetex
 zxmn2f34mata.pdf pdf_icon

ZXMN2F34MATA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low ... See More ⇒

 4.1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F34MATA

ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low ... See More ⇒

 6.1. Size:407K  diodes
 zxmn2f34fh.pdf pdf_icon

ZXMN2F34MATA

ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC-... See More ⇒

 6.2. Size:106K  tysemi
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ZXMN2F34MATA

Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S... See More ⇒

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Detailed specifications: ZXMN2A03E6TA, ZXMN2A03E6TC, ZXMN2A14FTA, ZXMN2B01FTA, ZXMN2B03E6TA, ZXMN2B14FHTA, ZXMN2F30FHTA, ZXMN2F34FHTA, IRF1407, ZXMN3A01E6TA, ZXMN3A01E6TC, ZXMN3A01FTA, ZXMN3A01FTC, ZXMN3A01Z, ZXMN3A02N8TA, ZXMN3A02X8TA, ZXMN3A02X8TC

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