All MOSFET. ZXMN3A03E6TA Equivalents Search

 

ZXMN3A03E6TA Spec and Replacement


   Type Designator: ZXMN3A03E6TA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23-6

 ZXMN3A03E6TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3A03E6TA Specs

 ..1. Size:189K  zetex
zxmn3a03e6ta.pdf pdf_icon

ZXMN3A03E6TA

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan... See More ⇒

 3.1. Size:189K  zetex
zxmn3a03e6tc.pdf pdf_icon

ZXMN3A03E6TA

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan... See More ⇒

 4.1. Size:191K  diodes
zxmn3a03e6.pdf pdf_icon

ZXMN3A03E6TA

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan... See More ⇒

 7.1. Size:180K  diodes
zxmn3a02n8.pdf pdf_icon

ZXMN3A03E6TA

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance ... See More ⇒

Detailed specifications: ZXMN3A01E6TA , ZXMN3A01E6TC , ZXMN3A01FTA , ZXMN3A01FTC , ZXMN3A01Z , ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , IRF520 , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA , ZXMN3B01FTA , ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA .

History: ZXMD63C02X | ZXMN3A04KTC

Keywords - ZXMN3A03E6TA MOSFET specs

 ZXMN3A03E6TA cross reference
 ZXMN3A03E6TA equivalent finder
 ZXMN3A03E6TA lookup
 ZXMN3A03E6TA substitution
 ZXMN3A03E6TA replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.