ZXMN6A11ZTA MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN6A11ZTA
Marking Code: 11N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 35.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-89
ZXMN6A11ZTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN6A11ZTA Datasheet (PDF)
zxmn6a11zta.pdf
A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green
zxmn6a11z.pdf
ZXMN6A11Z60V SOT89 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.6600.180 @ VGS= 4.5V 2.9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc
zxmn6a11z.pdf
ZXMN6A11Zwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK1017-01
History: 2SK1017-01
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