IRFR420 Specs and Replacement
Type Designator: IRFR420
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ -
Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
IRFR420 datasheet
..2. Size:879K international rectifier
irfr420 irfu420.pdf 
PD - 95078A IRFR420PbF IRFU420PbF Lead-Free 1/7/05 Document Number 91275 www.vishay.com 1 IRFR/U420PbF Document Number 91275 www.vishay.com 2 IRFR/U420PbF Document Number 91275 www.vishay.com 3 IRFR/U420PbF Document Number 91275 www.vishay.com 4 IRFR/U420PbF Document Number 91275 www.vishay.com 5 IRFR/U420PbF Document Number 91275 www.vishay.com 6 IRFR/U420... See More ⇒
..4. Size:1841K vishay
irfr420 irfu420 sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche Rated Qg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 Available in Tap... See More ⇒
..5. Size:1086K vishay
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf
IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease ... See More ⇒
..6. Size:264K inchange semiconductor
irfr420.pdf
isc N-Channel MOSFET Transistor IRFR420 FEATURES Drain Current I = 2.4A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
0.1. Size:248K international rectifier
irfr420apbf irfu420apbf.pdf
PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitanc... See More ⇒
0.2. Size:114K international rectifier
irfr420a.pdf
PD - 94355 SMPS MOSFET IRFR420A IRFU420A Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 3.0 3.3A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avalan... See More ⇒
0.3. Size:647K fairchild semi
irfr420b irfu420b.pdf
November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to ... See More ⇒
0.4. Size:500K samsung
irfr420a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char... See More ⇒
0.5. Size:265K vishay
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac... See More ⇒
0.6. Size:241K vishay
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac... See More ⇒
0.7. Size:251K infineon
irfr420a irfu420a sihfr420a sihfu420a.pdf
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 17 Fully Characterized Capacitance and Qgs (nC) 4.3 Avalanche Voltage and Current Qgd (nC) 8.5... See More ⇒
0.8. Size:879K cn vbsemi
irfr420tr.pdf
IRFR420TR www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS ... See More ⇒
0.9. Size:970K cn vbsemi
irfr420btm.pdf
IRFR420BTM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS... See More ⇒
0.10. Size:241K inchange semiconductor
irfr420tr.pdf
isc N-Channel MOSFET Transistor IRFR420TR, IIRFR420TR FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate... See More ⇒
Detailed specifications: IRFR310A
, IRFR320
, IRFR320A
, IRFR3303
, IRFR3910
, IRFR410
, IRFR4105
, IRFR411
, SPP20N60C3
, IRFR420A
, IRFR5305
, IRFR5410
, IRFR5505
, IRFR6215
, IRFR9010
, IRFR9012
, IRFR9014
.
Keywords - IRFR420 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
