All MOSFET. ZXMP10A18GTA Datasheet

 

ZXMP10A18GTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP10A18GTA
   Marking Code: ZXMP10A18
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.9 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-223

 ZXMP10A18GTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP10A18GTA Datasheet (PDF)

 ..1. Size:608K  diodes
 zxmp10a18gta.pdf

ZXMP10A18GTA ZXMP10A18GTA

A Product Line ofDiodes IncorporatedZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability

 4.1. Size:277K  diodes
 zxmp10a18g.pdf

ZXMP10A18GTA ZXMP10A18GTA

ZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-r

 5.1. Size:823K  diodes
 zxmp10a18k.pdf

ZXMP10A18GTA ZXMP10A18GTA

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 5.2. Size:820K  zetex
 zxmp10a18ktc.pdf

ZXMP10A18GTA ZXMP10A18GTA

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

 5.3. Size:904K  cn vbsemi
 zxmp10a18k.pdf

ZXMP10A18GTA ZXMP10A18GTA

ZXMP10A18Kwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Swit

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