All MOSFET. ZXMP3A16N8TA Datasheet

 

ZXMP3A16N8TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP3A16N8TA
   Marking Code: ZXMP3A16
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.2 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO-8

 ZXMP3A16N8TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP3A16N8TA Datasheet (PDF)

 ..1. Size:144K  zetex
 zxmp3a16n8ta.pdf

ZXMP3A16N8TA ZXMP3A16N8TA

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 4.1. Size:154K  diodes
 zxmp3a16n8.pdf

ZXMP3A16N8TA ZXMP3A16N8TA

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 6.1. Size:574K  diodes
 zxmp3a16gta.pdf

ZXMP3A16N8TA ZXMP3A16N8TA

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

 6.2. Size:162K  diodes
 zxmp3a16g.pdf

ZXMP3A16N8TA ZXMP3A16N8TA

ZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT223FEATURES Low on-resista

 6.3. Size:156K  diodes
 zxmp3a16dn8.pdf

ZXMP3A16N8TA ZXMP3A16N8TA

ZXMP3A16DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistan

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RFG30P05

 

 
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