ZXMP6A13FQ Datasheet and Replacement
Type Designator: ZXMP6A13FQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 25.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOT-23
ZXMP6A13FQ substitution
ZXMP6A13FQ Datasheet (PDF)
zxmp6a13fq.pdf

ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu
zxmp6a13f.pdf

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1
zxmp6a13fta.pdf

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = 25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free.
zxmp6a13gta.pdf

A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free, RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =
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