ZXMP7A17KTC
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMP7A17KTC
Marking Code: ZXMP7A17
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 9.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.6
nC
trⓘ - Rise Time: 3.4
nS
Cossⓘ -
Output Capacitance: 52
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
DPAK
ZXMP7A17KTC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMP7A17KTC
Datasheet (PDF)
..1. Size:529K zetex
zxmp7a17ktc.pdf
ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
5.1. Size:532K diodes
zxmp7a17k.pdf
ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
6.1. Size:428K diodes
zxmp7a17g.pdf
ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
6.2. Size:662K diodes
zxmp7a17gq.pdf
ZXMP7A17GQ Green70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS RDS(on) TA = +25C Low On-Resistance Fast Switching Speed 160m @ VGS= -10V -2.6A -70V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 250m @ VGS= -4.5V -1.6A Halogen and Antimony Free.
6.3. Size:426K zetex
zxmp7a17gta.pdf
ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
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