All MOSFET. ZXMS6006DT8Q Datasheet

 

ZXMS6006DT8Q Datasheet and Replacement


   Type Designator: ZXMS6006DT8Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.16 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SM-8
 

 ZXMS6006DT8Q substitution

   - MOSFET ⓘ Cross-Reference Search

 

ZXMS6006DT8Q Datasheet (PDF)

 ..1. Size:276K  diodes
zxms6006dt8q.pdf pdf_icon

ZXMS6006DT8Q

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 3.1. Size:267K  diodes
zxms6006dt8.pdf pdf_icon

ZXMS6006DT8Q

A Product Line of Diodes IncorporatedZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

 5.1. Size:241K  diodes
zxms6006dg.pdf pdf_icon

ZXMS6006DT8Q

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 5.2. Size:340K  diodes
zxms6006dgq.pdf pdf_icon

ZXMS6006DT8Q

GreenZXMS6006DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOB25S65 | ZXMN3B01F | ZXMP6A16DN8 | AOB412L | BUK7109-75AIE | CS2232 | AOB264L

Keywords - ZXMS6006DT8Q MOSFET datasheet

 ZXMS6006DT8Q cross reference
 ZXMS6006DT8Q equivalent finder
 ZXMS6006DT8Q lookup
 ZXMS6006DT8Q substitution
 ZXMS6006DT8Q replacement

 

 
Back to Top

 


 
.