ZXMS6006DT8Q PDF and Equivalents Search

 

ZXMS6006DT8Q Specs and Replacement

Type Designator: ZXMS6006DT8Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.16 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SM-8

ZXMS6006DT8Q substitution

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ZXMS6006DT8Q datasheet

 ..1. Size:276K  diodes
 zxms6006dt8q.pdf pdf_icon

ZXMS6006DT8Q

Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir... See More ⇒

 3.1. Size:267K  diodes
 zxms6006dt8.pdf pdf_icon

ZXMS6006DT8Q

A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A ... See More ⇒

 5.1. Size:241K  diodes
 zxms6006dg.pdf pdf_icon

ZXMS6006DT8Q

A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short... See More ⇒

 5.2. Size:340K  diodes
 zxms6006dgq.pdf pdf_icon

ZXMS6006DT8Q

Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro... See More ⇒

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Detailed specifications: ZXMS6004DGQ , ZXMS6004DT8Q , ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , SPP20N60C3 , ZXMS6006SGQ , SI1002R , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R .

History: SI1002R

Keywords - ZXMS6006DT8Q MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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