All MOSFET. ZXMS6006DT8Q Datasheet

 

ZXMS6006DT8Q MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMS6006DT8Q

SMD Transistor Code: ZXMS6006D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.16 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SM-8

ZXMS6006DT8Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMS6006DT8Q Datasheet (PDF)

1.1. zxms6006dgq.pdf Size:340K _upd-mosfet

ZXMS6006DT8Q
ZXMS6006DT8Q

Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 490mJ • Short Circuit Pro

1.2. zxms6006dt8q.pdf Size:276K _upd-mosfet

ZXMS6006DT8Q
ZXMS6006DT8Q

Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE ® INTELLIFET MOSFET Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • On-State Resistance 100mΩ • Low Input Current • Nominal Load Current (VIN = 5V) 2.8A • Logic Level Input (3.3V and 5V) • Clamping Energy 210mJ • Short Cir

 1.3. zxms6006dt8.pdf Size:267K _diodes

ZXMS6006DT8Q
ZXMS6006DT8Q

A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit prot

1.4. zxms6006dg.pdf Size:241K _diodes

ZXMS6006DT8Q
ZXMS6006DT8Q

A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m? Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short circuit protection

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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