All MOSFET. SI1028X Datasheet

 

SI1028X MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1028X
   Marking Code: G*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.48 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SC-89

 SI1028X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1028X Datasheet (PDF)

 ..1. Size:148K  vishay
 si1028x.pdf

SI1028X SI1028X

Si1028XVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) ESD Protected: 550 V Typical HBM0.650 at VGS = 10 V 0.48 Material categorization:30 0.5For definitions of compliance please see0.770 at VGS = 4.5 V 0.45www.vishay.com/doc?99912BENEFITS Low Offset Voltage

 9.1. Size:135K  vishay
 si1024x.pdf

SI1028X SI1028X

Si1024XVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated0.85 at VGS = 2.5 V Very Small Footprint20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7 Low

 9.2. Size:155K  vishay
 si1021r.pdf

SI1028X SI1028X

Si1021RVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition- 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.)

 9.3. Size:110K  vishay
 si1023x.pdf

SI1028X SI1028X

Si1023XVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = - 4.5 V - 350 TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint1.6 at VGS = - 2.5 V - 300- 20 High-Side Switching2.7 at VGS = - 1.8 V - 150 Low On-Resistance: 1.2

 9.4. Size:114K  vishay
 si1026x.pdf

SI1028X SI1028X

Si1026XVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.40 at VGS = 10 V 60 1 to 2.5 500 Low On-Resistance: 1.40 Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ.) Low Input and Output

 9.5. Size:149K  vishay
 si1023cx.pdf

SI1028X SI1028X

Si1023CXVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.756 at VGS = - 4.5 V - 0.35 100 % Rg Tested1.038 at VGS = - 2.5 V - 0.35- 20 1 nC Typical ESD protection: 1000 V (HBM)1.44 at VGS = - 1.8 V - 0.1 Fast Sw

 9.6. Size:130K  vishay
 si1029x.pdf

SI1028X SI1028X

Si1029XVishay SiliconixComplementary N- and P-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition1.40 at VGS = 10 V 500 TrenchFET Power MOSFETsN-Channel 603 at VGS = 4.5 V 200 Very Small Footprint High-Side Switching4 at VGS = - 10 V - 500P-Channel - 60 Low On-Re

 9.7. Size:113K  vishay
 si1025x.pdf

SI1028X SI1028X

Si1025XVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (min) (V) RDS(on) () VGS(th) (V) ID (mA)Definition4 at VGS = - 10 V - 1 to - 3.0 - 500 - 60 TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (ty

 9.8. Size:151K  vishay
 si1022r.pdf

SI1028X SI1028X

Si1022RVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS(min.) (V) RDS(on) () VGS(th) (V) ID (mA)Definition1.25 at VGS = 10 V 60 1 to 2.5 330 TrenchFET Power MOSFETs Low On-Resistance: 1.25 Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: US6U37

 

 
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