SI1069X PDF and Equivalents Search

 

SI1069X Specs and Replacement

Type Designator: SI1069X

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.94 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.184 Ohm

Package: SC-89

SI1069X substitution

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SI1069X datasheet

 ..1. Size:121K  vishay
 si1069x.pdf pdf_icon

SI1069X

Si1069X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.184 at VGS = - 4.5 V - 0.94 TrenchFET Power MOSFET - 20 4.23 0.268 at VGS = - 2.5 V - 0.78 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable ... See More ⇒

 9.1. Size:142K  vishay
 si1065x.pdf pdf_icon

SI1069X

Si1065X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested 0.156 at VGS = - 4.5 V Material categorization 1.18 For definitions of compliance please see 0.190 at VGS = - 2.5V - 12 1.07 6.7 nC www.vishay.com/doc?99912 0.245 at VGS = - 1.8V 0.49 APPLICATIONS Loa... See More ⇒

 9.2. Size:154K  vishay
 si1062x.pdf pdf_icon

SI1069X

New Product Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Gate-Source ESD Protected 1000 V 0.420 at VGS = 4.5 V 0.5 Material categorization For definitions of compliance please see 0.492 at VGS = 2.5 V 0.2 www.vishay.com/doc?99912 20 1 nC 0.597 at VGS = 1.8 V 0.2 ... See More ⇒

 9.3. Size:120K  vishay
 si1067x.pdf pdf_icon

SI1069X

Si1067X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V 1.06 TrenchFET Power MOSFET - 20 0.166 at VGS = - 2.5V 1.0 6.0 100 % Rg Tested 0.214 at VGS = - 1.8V 0.49 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load ... See More ⇒

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Detailed specifications: SI1050X, SI1051X, SI1054X, SI1056X, SI1058X, SI1062X, SI1065X, SI1067X, IRFB31N20D, SI1070X, SI1071X, SI1072X, SI1073X, SI1077X, SI1079X, SI1300BDL, SI1302DL

Keywords - SI1069X MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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