All MOSFET. SI1073X Datasheet

 

SI1073X MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1073X
   Marking Code: 1*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.98 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.173 Ohm
   Package: SC-89

 SI1073X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1073X Datasheet (PDF)

 ..1. Size:121K  vishay
 si1073x.pdf

SI1073X SI1073X

Si1073XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.173 at VGS = - 10 V - 0.98a TrenchFET Power MOSFET- 30 3.250.243 at VGS = - 4.5 V - 0.83 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSC-8

 9.1. Size:120K  vishay
 si1070x.pdf

SI1073X SI1073X

Si1070XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.099 at VGS = 4.5 V 1.2a TrenchFET Power MOSFET30 3.50.140 at VGS = 2.5 V 1.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De

 9.2. Size:163K  vishay
 si1077x.pdf

SI1073X SI1073X

Si1077XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Typical ESD Performance 2500 V0.078 at VGS = - 4.5 V - 1.4 100 % Rg Tested Material categorization:0.098 at VGS = - 2.5 V - 1- 20 12.1 nCFor definitions of compliance please see 0.130 at VGS = - 1.8 V - 1www.vi

 9.3. Size:122K  vishay
 si1072x.pdf

SI1073X SI1073X

Si1072XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.093 at VGS = 10 V 1.3a TrenchFET Power MOSFET30 5.410.129 at VGS = 4.5 V 1.2 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De

 9.4. Size:203K  vishay
 si1079x.pdf

SI1073X SI1073X

Si1079Xwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Typical ESD performance 2500 V0.100 at VGS = -4.5 V -1.44 100 % Rg tested-30 0.112 at VGS = -3.7 V -1.36 8.1 nC Material categorization: 0.140 at VGS = -2.5 V -1.22For definitions of compliance please s

 9.5. Size:216K  vishay
 si1078x.pdf

SI1073X SI1073X

Si1078Xwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.142 at VGS = 10 V 1.02 Typical ESD performance 1400 V30 0.154 at VGS = 4 V 0.98 1.5 Material categorization:0.195 at VGS = 2.5 V 0.87for definitions of compliance please see www.v

 9.6. Size:121K  vishay
 si1071x.pdf

SI1073X SI1073X

Si1071XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.960.167 at VGS = - 10 V TrenchFET Power MOSFET- 30 0.90 3.250.188 at VGS = - 4.5 V 100 % Rg Tested0.244 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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